(China (Mainland))
Product Summary
The IRF840 is a Third generation Power MOSFET from Vishay which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRF840 absolute maximum ratings: (1)Drain-Source Voltage: 500 V; (2)Gate-Source Voltage: ± 20 V; (3)Continuous Drain Current VGS at 10 V: 8.0 A at TC = 25 ℃, 5.1 A at TC = 100 ℃; (4)Pulsed Drain Currenta: 32 A; (5)Linear Derating Factor: 1.0 W/℃; (6)Single Pulse Avalanche Energy b: 510 mJ; (7)Repetitive Avalanche Current a: 8.0 A; (8)Repetitive Avalanche Energy a: 13 mJ; (9)Maximum Power Dissipation TC = 25 ℃: 125 W; (10)Peak Diode Recovery dV/dt c: 3.5 V/ns; (11)Operating Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
IRF840 features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF840, SiHF840 |
Other |
|
Data Sheet |
Negotiable |
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IRF840A, SiHF840A |
Other |
|
Data Sheet |
Negotiable |
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|
IRF840AL |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
Negotiable |
|
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 |
IRF840AS |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
Negotiable |
|
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IRF840ASTRL |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
Negotiable |
|
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IRF840ASTRLPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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IRF840ASTRR |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
Negotiable |
|
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|
IRF840ASTRRPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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